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IXXH50N60B3D1

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Reflective - Analog Output [310]
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Analog and Digital Output [2993]
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RTD (Resistance Temperature Detector) [1016]
Thermocouples, Temperature Probes [1087]
Thermostats - Mechanical [883]
Thermostats - Mechanical - Industrial [789]
Thermostats - Solid State [1013]

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IXXH50N60B3D1

Gate-Emitter Leakage Current : 100 nA

Product Category : IGBT Transistors

Mounting Style : Through Hole

Continuous Collector Current at 25 C : 120 A

Pd - Power Dissipation : 600 W

Collector- Emitter Voltage VCEO Max : 600 V

Package / Case : TO-247-3

Maximum Operating Temperature : + 175 C

Packaging : Tube

Maximum Gate Emitter Voltage : +/- 20 V

Collector-Emitter Saturation Voltage : 1.55 V

Manufacturer : IXYS

Description : IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT

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The IXXH50N60B3D1,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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