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Beijing Silk Road Enterprise Management Services Co.,LTD
Beijing Silk Road Enterprise Management Services Co.,LTD
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NGB8206ANSL3G

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NGB8206ANSL3G

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Gate-Emitter Leakage Current : 350 uA

Product Category : IGBT Transistors

Mounting Style : Through Hole

Pd - Power Dissipation : 150 W

Collector- Emitter Voltage VCEO Max : 390 V

Package / Case : D2PAK-3

Maximum Operating Temperature : + 175 C

Packaging : Tube

Maximum Gate Emitter Voltage : 15 V

Continuous Collector Current at 25 C : 20 A

Manufacturer : Littelfuse

Description : IGBT Transistors IGBT 20A 350V N-CHANNEL

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The NGB8206ANSL3G,from Littelfuse,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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