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BSM300GAR120DLC

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BSM300GAR120DLC

Gate-Emitter Leakage Current : 400 nA

Product Category : IGBT Transistors

Minimum Operating Temperature : - 40 C

Continuous Collector Current at 25 C : 300 A

Collector- Emitter Voltage VCEO Max : 1200 V

Pd - Power Dissipation : 2500 W

Maximum Operating Temperature : + 125 C

Package : Module

Maximum Gate Emitter Voltage : 20 V

Packaging : Box

RoHS : 100% Green available

Manufacturer : Infineon Technologies

Collector-Emitter Saturation Voltage : 2.1 V

Continuous Collector Current : 625 A

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The BSM300GAR120DLC,from Infineon Technologies,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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