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FGB20N60SFD

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FGB20N60SFD

Gate-Emitter Leakage Current : 400 nA

Product Category : IGBT Transistors

Mounting Style : Through Hole

Continuous Collector Current at 25 C : 40 A

Pd - Power Dissipation : 83 W

Collector- Emitter Voltage VCEO Max : 600 V

Package / Case : TO-263AB

Packaging : Reel

Maximum Gate Emitter Voltage : 20 V

Collector-Emitter Saturation Voltage : 2.8 V

Manufacturer : Fairchild Semiconductor

Description : IGBT Transistors 600V 20A Field Stop

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The FGB20N60SFD,from Fairchild Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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