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TGF2929-HM

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TGF2929-HM

Transistor Polarity : N-Channel

Technology : GaN SiC

Product Category : RF JFET Transistors

Mounting Style : SMD/SMT

Gain : 17.4 dB

Transistor Type : HEMT

Output Power : 132 W

Package / Case : Flange Ceramic-2

Maximum Operating Temperature : + 85 C

Vds - Drain-Source Breakdown Voltage : 50 V

Packaging : Waffle

Id - Continuous Drain Current : 7.2 A

Vgs - Gate-Source Breakdown Voltage : - 2.8 V

Pd - Power Dissipation : 140 W

Manufacturer : Qorvo

Description : RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN

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The TGF2929-HM,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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