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TGF2060

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RTD (Resistance Temperature Detector) [1016]
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TGF2060

Vgs - Gate-Source Breakdown Voltage : - 3 V

Technology : GaAs

Product Category : RF JFET Transistors

Mounting Style : SMD/SMT

Gain : 12 dB

Transistor Type : pHEMT

Pd - Power Dissipation : 2.1 W

Maximum Operating Temperature : + 150 C

Vds - Drain-Source Breakdown Voltage : 8 V

Packaging : Gel Pack

Id - Continuous Drain Current : 194 mA

Manufacturer : Qorvo

Description : RF JFET Transistors DC-20GHz NF 1.4dB Gain 12dB P1dB 28dBm

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The TGF2060,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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