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TGF2819-FL

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TGF2819-FL

Transistor Polarity : N-Channel

Technology : GaN SiC

Product Category : RF JFET Transistors

Mounting Style : Screw

Gain : 14 dB

Transistor Type : HEMT

Output Power : 100 W

Pd - Power Dissipation : 86 W

Maximum Operating Temperature : + 85 C

Vds - Drain-Source Breakdown Voltage : 32 V

Packaging : Tray

Maximum Drain Gate Voltage : 145 V

Id - Continuous Drain Current : 7.32 A

Vgs - Gate-Source Breakdown Voltage : - 2.9 V

Manufacturer : Qorvo

Description : RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz

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The TGF2819-FL,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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